STGB30H60DLLFBAG

批量生产
Design Win

汽车级600 V、30 A高速沟槽栅场截止HB系列IGBT

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产品概述

描述

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • 所有功能

    • AEC-Q101 qualified
    • Maximum junction temperature: TJ = 175 °C
    • Logic level gate drive
    • High speed switching series
    • Minimized tail current
    • VCE(sat) = 1.7 V (typ.) @ IC = 30 A
    • Low VF soft recovery co-packaged diode
    • Tight parameters distribution
    • Safer paralleling
    • Low thermal resistance

EDA符号、封装和3D模型

STMicroelectronics - STGB30H60DLLFBAG

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质量与可靠性

产品型号 Marketing Status 一般描述 等级规格 符合RoHS级别 材料声明**
STGB30H60DLLFBAG
批量生产
Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed D2PAK 汽车应用 Ecopack1

STGB30H60DLLFBAG

Package:

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Material Declaration**:

Marketing Status

批量生产

General Description

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Package

D2PAK

Grade

Automotive

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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STGB30H60DLLFBAG
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经销商的可用性 STGB30H60DLLFBAG

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STGB30H60DLLFBAG 批量生产

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STGB30H60DLLFBAG

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一般描述:

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商