Product overview
描述
该器件是一款采用先进专有沟槽栅极场截止结构设计的IGBT。该器件是M系列IGBT的一部分，代表了逆变器系统性能与效率之间的理想平衡，其中低损耗和短路功能至关重要。此外，VCE(sat)正温度系数特性及紧密的参数分布，进一步提升了并联操作的安全性。
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All features
- 短路耐受时间为10 μs
- 低VCE(sat) = 1.85 V（典型值）@ IC = 75 A
- 正VCE(sat) 温度系数
- 参数分布紧密
- 最高结温：TJ = 175 °C
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STMicroelectronics - STG75M120F3D7
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