产品概要
描述
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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性能一览
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V (typ.) @ IC = 75 A
- Minimized tail current
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STG75H65FB2D7
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Quality and Reliability
| Part Number | Marketing Status | Grade | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|
| STG75H65FB2D7 | Active 产品已量产 | Industrial | 10 | 2024-06-04T00:00:00.000+02:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STG75H65FB2D7 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STG75H65FB2D7 Active