产品概述
描述
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
-
所有功能
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V (typ.) @ IC = 75 A
- Minimized tail current
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
EDA符号、封装和3D模型
意法半导体 - STG75H65FB2D7
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
You’re now leaving st.com and will be re-directed to our Partner’s website.
For the latest innovations and solutions from ST, sign up for our newsletters.
样片和购买
| 料号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STG75H65FB2D7 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STG75H65FB2D7 批量生产