产品概要
描述
This IGBT is developed using a new advanced proprietary trench gate field-stop fine pitch cell allowing lower VCE(sat) at very high current density. A perfectly engineered trench allows very good tsc with low VCE(sat) and optimized switching performances. Mesa technology multiple field-stop profile reduces VCE overshoot through turn-off di/dt optimization and allows breakdown voltage robustness increase. This die is equipped with sensors circuitry for temperature and current. From a mechanical point of view it offers polyimide top die passivation suitable for power modules and both sides metallization suitable for sintering processes.
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性能一览
- AEC-Q101 qualified
- 3 μs of minimum short-circuit withstand time at VCC = 450 V, VGE = 15 V, starting TJ = 175 °C
- Low VCE(sat) = 1.5 V (typ.) at IC = 500 A
- Temperature and current sensors integrated circuitry
- Enhanced switching performances
- Increased BV robustness
- Top and back metallization suitable for high performances modules
EDA Symbols, Footprints and 3D Models
Quality and Reliability
| Part Number | Marketing Status | Grade | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|
| STG320MH75FD11AG | Active 产品已量产 | Automotive | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STG320MH75FD11AG | | | distributors 无法联系到经销商,请联系我们的销售办事处 | |||||||||||
STG320MH75FD11AG Active