STFH10N60M2

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Design Win

N沟道600 V、0.55 Ohm典型值、7.5 A MDmesh M2功率MOSFET,TO-220FP宽沿面封装

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产品概述

描述

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.

  • 所有功能

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected
    • Wide distance of 4.25 mm between the pins

EDA符号、封装和3D模型

STMicroelectronics - STFH10N60M2

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