产品概述
描述
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
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所有功能
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
- Wide distance of 4.25 mm between the pins
精选 视频
意法半导体提供全新的高压MDmesh M6和M9 STPOWER MOSFET,这些产品采用紧凑且散热效率高的TO-LL表面贴装型封装,可同时提供高的电气和热效率、外形紧凑和节省空间等特性,适用于SMPS、数据中心和太阳能微逆变器等电源转换应用。这些器件具有附加的Kelvin源引脚,可减小接通/关断开关损耗,有助于设计人员进一步提高效率。
特别推荐
EDA符号、封装和3D模型
所有资源
资源标题 | 版本 | 更新时间 |
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SPICE models (1)
资源标题 | 版本 | 更新时间 | ||
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ZIP | 1.0 | 02 Feb 2021 | 02 Feb 2021 |