产品概述
描述
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique \"Single Feature Size\" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
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所有功能
- Standard threshold drive
- 100% avalanche tested
特别推荐
EDA符号、封装和3D模型
意法半导体 - STD65N55F3
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STD65N55F3 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STD65N55F3 批量生产
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distributors
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