STD3N80K5

批量生产
Design Win Education

N沟道800 V、2.8 Ohm典型值、2.5 A MDmesh K5功率MOSFET,DPAK封装

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产品概述

描述

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

  • 所有功能

    • Industry’s lowest RDS(on) x area
    • Industry’s best FoM (figure of merit)
    • Ultra-low gate charge
    • 100% avalanche tested
    • Zener-protected

EDA符号、封装和3D模型

STMicroelectronics - STD3N80K5

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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Symbols

符号

Footprints

封装

3D model

3D模型

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STD3N80K5
批量生产
DPAK 工业 Ecopack2

STD3N80K5

Package:

DPAK

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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包装类型
RoHS
Country of Origin
ECCN (US)
ECCN (EU)
STD3N80K5
Available at distributors

经销商的可用性 STD3N80K5

代理商名称
地区 库存 最小订购量 第三方链接

代理商库存报告日期:

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STD3N80K5 批量生产

Budgetary Price (US$)*/Qty:
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包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

STD3N80K5

代理商名称

代理商库存报告日期:

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商