STD15N50M2AG
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汽车级N沟道500 V、0.336 Ohm典型值、10 A MDmesh M2功率MOSFET,DPAK封装

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产品概述

描述

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

EDA符号、封装和3D模型

意法半导体 - STD15N50M2AG

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