产品概述
描述
These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
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所有功能
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
特别推荐
EDA符号、封装和3D模型
意法半导体 - STB80N20M5
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 24 Feb 2016 | 24 Feb 2016 |
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STB80N20M5 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STB80N20M5 批量生产
Budgetary Price (US$)*/Qty:
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distributors
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