产品概述
描述
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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所有功能
- AEC-Q101 qualified
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
特别推荐
EDA符号、封装和3D模型
意法半导体 - STB7ANM60N
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 | Actions | 細節 | 下載 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | Actions | Options | |
|---|---|---|---|---|---|
| ZIP | 1.0 | 16 Sep 2016 | 16 Sep 2016 |