产品概述
描述
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
-
所有功能
- AEC-Q101 qualified
- Gate charge minimized
- 100% avalanche tested
- Excellent FoM (figure of merit)
- Very low intrinsic capacitance
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STB30NF20L
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
样片和购买
Don't show this again
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STB30NF20L | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STB30NF20L 批量生产
Budgetary Price (US$)*/Qty:
-
distributors
无法联系到经销商，请联系我们的销售办事处
包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):
Don't show this again