产品概述
描述
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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所有功能
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
特别推荐
EDA符号、封装和3D模型
意法半导体 - STB26N60M2
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符号
封装
3D模型