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STB120N4LF6
Obsolete
Design Win
N沟道40 V、3.1 mOhm、80 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，D2PAK封装

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产品概要

描述

This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

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Discover our medium-voltage N-channel power MOSFET portfolio, ranging from > 30 V to 350 V, for a broad range of industrial and automotive applications.

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STMicroelectronics - STB120N4LF6

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