产品概述
描述
这些N沟道功率MOSFET采用意法半导体革命性的MDmesh技术开发，该技术将多漏极工艺与公司的PowerMESH水平布局相结合。此类器件具有极低的导通电阻、高dv/dt以及出色的雪崩特性。采用意法半导体专有的条带技术，这些功率MOSFET的整体动态性能优于市场上的同类产品。
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All features
- 高dv/dt和雪崩特性
- 低输入电容和栅极电荷
- 低栅极输入电阻
- 经过100%雪崩测试
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB11NM80T4
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STB11NM80T4 | Active 产品已量产 | D2PAK | Industrial | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STB11NM80T4 | | | distributors 无法联系到经销商，请联系我们的销售办事处 | |||||||||||
STB11NM80T4 Active
Budgetary Price (US$)*/Qty:
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distributors
无法联系到经销商，请联系我们的销售办事处
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