IRF630

批量生产
Design Win

N沟道200 V、0.35 Ohm典型值、9 A功率MOSFET,DPAK封装

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产品概述

描述

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.

EDA符号、封装和3D模型

STMicroelectronics - IRF630

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Symbols

符号

Footprints

封装

3D model

3D模型

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
IRF630
批量生产
TO-220 工业 Ecopack2

IRF630

Package:

TO-220

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

TO-220

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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包装类型
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Country of Origin
ECCN (US)
ECCN (EU)
Operating temperature (°C)
最小值
最大值
IRF630
Available at distributors

经销商的可用性 IRF630

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地区 库存 最小订购量 第三方链接

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IRF630 批量生产

Budgetary Price (US$)*/Qty:
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包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

IRF630

Operating Temperature (°C)

Min:

Max:

代理商名称

代理商库存报告日期:

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商