产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the MS series IGBTs. This series represents an evolution of the low-loss M series. The diode has very low conduction losses and very low reverse losses. These features make it ideal for battery chargers.
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All features
- AEC-Q101 qualified
- 8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V, TJ (start) = 175 °C
- VCE(sat) = 1.95 V (typ.) @ IC = 40 A
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Ultra low conduction losses
- Ultra-low reverse losses
EDA Symbols, Footprints and 3D Models
STMicroelectronics - GWA40MS120DLAG
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| GWA40MS120DLAG | Active 产品已量产 | TO-247 long leads | Automotive | Ecopack2 | 10 | 2026-05-29T00:00:00.000+02:00 | |
GWA40MS120DLAG
Package:
TO-247 long leadsMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| GWA40MS120DLAG | | | distributors 无法联系到经销商，请联系我们的销售办事处 | |||||||||||
GWA40MS120DLAG Active