产品概要
描述
该器件是一款采用先进专有沟槽栅极场截止结构设计的IGBT。该器件属于MS系列IGBT。该系列是低损耗M系列的演进版本。二极管具有极低的导通损耗和极低的反向损耗。这些特性使其成为电池充电器的理想选择。
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性能一览
- 符合AEC-Q101标准
- 在VCC = 800 V、VGE = 15 V、TJ（启动）= 175 °C条件下，短路耐受时间为8 μs
- VCE(sat) = 1.95 V（典型值）@ IC = 40 A
- 参数分布紧密
- 正VCE(sat) 温度系数
- 低热阻
- 超低导通损耗
- 超低反向损耗
EDA Symbols, Footprints and 3D Models
STMicroelectronics - GWA40MS120DLAG
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| GWA40MS120DLAG | Active 产品已量产 | TO-247 long leads | Automotive | Ecopack2 | 10 | 2026-05-29T00:00:00.000+02:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| GWA40MS120DLAG | | | distributors 无法联系到经销商，请联系我们的销售办事处 | |||||||||||
GWA40MS120DLAG Active
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