产品概述
描述
The device in a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary PNP is the 2STR2160.
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所有功能
- Very low collector-emitter saturation voltage
- High current gain characteristic
- Fast switching speed
- Miniature SOT-23 plastic package for surface mounting circuits
EDA符号、封装和3D模型
意法半导体 - 2STR1160
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符号
封装
3D模型
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样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2STR1160 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
2STR1160 批量生产
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distributors
无法联系到经销商，请联系我们的销售办事处
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