The device features a 3D stacked sensor with a pixel construction that minimizes crosstalk while enabling a high quantum efficiency (QE) in the near infrared spectrum. It uses 40 nm/65 nm technology and has a 2.61 µm x 2.61 µm BSI pixel with full CDTI (capacitive deep trench), making it an excellent choice for high-performance imaging applications.
The device has the smallest sensor on the market with a die size of 2.6 mm x 2.5 mm and a resolution of 640-pixel x 600 pixel. Its pixel array is very small, measuring only 1.67 mm x 1.57 mm, and its optical format is between 1/9 inch. It has an operating junction temperature range of -30°C to 85°C, making it suitable for various environments.
The device features a single lane transmitter MIPI CSI-2 version 1.3, with a speed of 1.2 Gbps per lane. It also has a fast mode+ I²C control interface, an integrated temperature sensor, and can operate at up to 210 fps at full resolution and 260 fps with VGA resolution. It also has programmable sequences of 4-frame contexts, including frame parameters, automatic dark calibration, dynamic defective correction, and embedded autoexposure.
Overall, this device is an excellent choice for those looking for a high-performance imaging sensor with advanced features and a small form factor.
| 支持的器件 | VD55G0 |
| Device Type | 组件 |
| 功能 | Image sensor |
| 地点 |
| ST产品 |
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