GANSPIN1105
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100 V GaN high-power density half-bridge motor driver

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产品概要

描述

The GANSPIN1105 is a 100 V, 29 A, GaN half-bridge for compact, high-efficiency motor control applications. In a 5x6.5 mm LGA package, it integrates two GaN FETs, a gate driver, and supply capacitors. It offers a compact and efficient GaN power solution.

The GANSPIN1105 provides two independent logic inputs for the control of the high-side and low-side GaN FETs. The externally available outputs of the gate driver allow adjusting the switching speed for the best EMI and efficiency trade-off.

The GANSPIN1105 Smart shoot-through protection circuit, in combination with the interlocking, guarantees no simultaneous high-side and low-side conduction even at near zero dead time.

The dynamic bootstrap switch prevents overcharging of the bootstrap capacitor, ensuring stable gate drive voltage in all conditions.

A full set of protections, including UVLO and OVLO for both VCC and BOOT, and thermal shutdown, makes the device suitable for demanding applications.

Fast propagation delay, accurate delay matching, and high dV/dt immunity make the GANSPIN1105 suitable for motor control applications requiring power density and efficiency.

  • 性能一览

    • 5.5 mΩ half-bridge GaN FETs
    • Embedded gate driver with dynamic bootstrap switch
    • 100 V transient, 80 V continuous operating voltage
    • Switching performance:
      • Switching frequency up to 5 MHz
      • 20 ns propagation delay
      • 1 ns delay matching
    • Independent high-side and low-side driving signal with interlocking
    • Smart shoot-through protection
    • Adjustable turn-on timings
    • UVLO, OVLO, and thermal shutdown
    • Integrated VCC/Bootstrap capacitors

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STMicroelectronics - GANSPIN1105

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Quality and Reliability

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GANSPIN1105
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GANSPIN1105

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