M95M01-A150 | 产品 - 意法半导体

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产品概要

描述

The M95M01-A125, M95M01-A145 and M95M01-A150 are 1‑Mbit serial electrically erasable programmable memory (EEPROM) automotive-grade devices. Those manufactured in CMOSF8H operate up to +145°C, while those manufactured in CMOSF9V operate up to +150°C. They are qualified with the high reliability automotive standard AEC-Q100 grade 0, and are accessed through a simple serial SPI-compatible interface running at up to 16 MHz. Moreover,the devices manufactured in CMOSF9V follow the ASIL-B ready requirement.

The devices are byte-alterable memories (131072 × 8 bits), organized as 512 pages of 256 bytes, in which the data integrity is significantly improved thanks to an embedded error correction code logic.

The M95M01-A125, M95M01-A145 and M95M01-A150 offer an additional identification page (256 bytes), where the ST device identification can be read. This page can also store sensitive application parameters, which can later be permanently locked in read-only mode.

性能一览
Functional safety

Follows ASIL-B ready requirement

Grade

AEC-Q100 grade 0 conform qualification

SPI interface

Compatible with the serial peripheral interface (SPI) bus

Memory

1-Mbit (128-Kbyte) EEPROM

Page size: 256 bytes

Additional 256-byte lockable identification page

Supply voltage

2.5 V to 5.5 V for CMOSF8H products

1.7 V to 5.5 V for CMOSF9V products

Temperature

Operating temperature range:
-40 °C up to +125 °C for range 3

-40 °C up to +145 °C for range 4 for CMOSF8H

-40 °C up to +150 °C for range 4 for CMOSF9V

Clock frequency

Up to 16 MHz
Fast write cycle time

Byte and page write within 5 ms (typically 4 ms) for CMOSF8H products

Byte and page write within 3.5 ms (typically 2.6 ms) for CMOSF9V products

Advanced features

Schmitt trigger inputs for noise filtering

Software write protection by quarter block

Hardware write protection of the whole memory array

Enhanced ESD/latch-up protection

ESD human body model 4000 V

Write cycle performance

For CMOSF8H products
More than 4 million write cycles at +25 °C

More than 1.2 million write cycles at +85 °C

More than 600 k write cycles at +125 °C

More than 400 k write cycles at +145 °C

For CMOSF9V products
More than 4 million write cycles at +25 °C

More than 1.2 million write cycles at +85 °C

More than 600 k write cycles at +125 °C

More than 400 k Write cycles at +150 °C

Data retention performance

100 years at 25 °C for CMOSF8H products

15 years at 45 °C for CMOSF9V products

Ultra-low power current consumption (for CMOSF9V commercial products)

0.6 μA (typical) in standby mode

650 μA (typical) for read current

1 mA (typical) for write current

Packages

SO8N, TSSOP8, and WFDFPN8 (ECOPACK2-compliant)
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EDA Symbols, Footprints and 3D Models

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Available documentation resources
	Resource title	版本	Latest update	Actions	Details	下載

IBIS models (2)

	Resource title	版本	Latest update	Actions	Update date	Options
ZIP	Check to add to the download list IBIS models I2C M24xxx Automotive EEPROM	1.0	25 Jan 2021	ZIP	25 Jan 2021 IBIS models I2C M24xxx Automotive EEPROM 1.0
ZIP	Check to add to the download list IBIS models SPI M95xxx Automotive EEPROM	1.0	27 Apr 2021	ZIP	27 Apr 2021 IBIS models SPI M95xxx Automotive EEPROM 1.0

CAD Symbol & Footprint models (1)

	Resource title	版本	Latest update	Actions	Update date	Options
ZIP	Check to add to the download list 3D package models EEPROM	1.0	27 Apr 2021	ZIP	27 Apr 2021 3D package models EEPROM 1.0

Verilog models (2)

	Resource title	版本	Latest update	Actions	Update date	Options
ZIP	Check to add to the download list Verilog models I2C EEPROM M24xxx	1.0	28 Jan 2021	ZIP	28 Jan 2021 Verilog models I2C EEPROM M24xxx 1.0
ZIP	Check to add to the download list Verilog models SPI EEPROM M95M04	1.0	22 Jan 2021	ZIP	22 Jan 2021 Verilog models SPI EEPROM M95M04 1.0