产品概述
描述
The device is an advanced controller for a power MOSFET in high-side configuration, designed for the implementation of two intelligent high-side switches for 12 V, 24 V, and 48 V automotive applications. The control IC is interfaced to a host microcontroller through a 3.3 V and 5 V CMOS-compatible SPI interface and provides protection and diagnostics to the system.
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所有功能
- Designed for automotive applications
- General
- Dual independent channel high-side switch control IC with eFuse protection for automotive 12 V, 24 V, and 48 V applications
- SPI slave interface for host control
- 32-bit ST-SPI interface compatible with 3.3 V and 5 V CMOS level
- 2-stage charge pump
- Dual gate drive for an external MOSFET in high-side configuration
- Back to back configuration
- High precision bidirectional digital current sense for each channel via SPI through an external high-side shunt resistor
- Input for an NTC resistor to monitor the external MOSFET temperature
- Very low standby current: 25 μA in standby mode per channel, 0 μA in deep standby mode
- Emergency stop and limp-home pins for advanced safety features
- Device configuration lockout by a dedicated digital input pin
- Integrated ADC for TJ, VNTC, VOUT, VSENSEP1, 2 and VDS conversion
- Fast ADC for VDS, VSENSE conversion
- CCM: capacitive charging mode
- Few times programmable non-volatile memory (FTP NVM) embedded for customer sector program/erase/read
- Direct input pin for hardware control of external MOSFET gate pin
- BIST (current sense, VDS monitor and stuck on)
- QFN 5x5x0.9 mm 32+4L package with wettable flanks
- Protections
- Battery undervoltage shut-down configurable via SPI
- External MOSFET desaturation shutdown configurable via SPI
- Hard short circuit latch-off configurable via SPI
- Bidirectional OVL shutdown (over-load current) with a delay configurable via SPI
- I2t protection (current vs time latch-off) configurable via SPI (fuse-emulation)
- Device overtemperature shutdown
- Current sense undervoltage
- External battery (protection with external component) MOSFET overtemperature shutdown
- Reverse battery protection with external component
- Battery μcut protection with external component (compliant to LV124)
- Loss of GND
EDA符号、封装和3D模型
意法半导体 - VNFD1248F
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符号
封装
3D模型
质量与可靠性
| 料号 | Marketing Status | 包 | 等级规格 | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | 材料声明** |
|---|---|---|---|---|---|---|---|
| VNFD1248F | 预览 产品尚在设计阶段 | VFQFN 5X5X0.9 32+4L WETT. FLANKS | 汽车应用 | Ecopack2 | - | - | |
| VNFD1248FTR | 预览 产品尚在设计阶段 | VFQFN 5X5X0.9 32+4L WETT. FLANKS | 汽车应用 | Ecopack2 | - | - | |
VNFD1248F
Package:
VFQFN 5X5X0.9 32+4L WETT. FLANKSMaterial Declaration**:
VNFD1248FTR
Package:
VFQFN 5X5X0.9 32+4L WETT. FLANKSMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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样片和购买
| 料号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VNFD1248F | | | distributors 无法联系到经销商，请联系我们的销售办事处 | ||||||||||
| VNFD1248FTR | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
VNFD1248F 预览
VNFD1248FTR 预览