在功率转换器电路中使用高压碳化硅二极管可以跨越传统的效率和功率密度障碍。
意法半导体设计了两种平衡版本的650 V和1200 V二极管，具有同类产品最佳正向压降 (VF) 和浪涌能力 (IFSM)，极大地限制了导通损耗，降低了二极管结温，这也正是二次整流功能的关键。
在PFC应用中，对于初级整流，二极管直接连接到主电源。我们碳化硅二极管的稳健性经过验证，使意法半导体成为市面上第一个发布车规级AEC-Q101标准碳化硅器件的供应商。我们的工程师在低VF和高浪涌能力方面展开了很多工作，不断增加设计的稳健性，增强转换器效率和可靠性。
意法半导体的车规级650 V二极管系列范围为6至40 A，采用TO-220、TO-220ACIns、DO-247、TO-247、I²PAK和DPAK封装。我们的低VF和高IFSM系列车规级1200 V器件范围从10到20 A，采用TO-220封装。
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STMicroelectronics presents ACEPACK SMIT: a surface-mount power module with top-side cooling, which ensures higher power density and improved thermal management for very efficient and more compact systems.
High efficiency 3-phase PFC with SiC devices & digital control
特别推荐
1200 V SiC automotive-grade diodes with the lowest forward voltage drop ever
The new AEC-Q101 1200 V SiC diodes – 10-, 15- and 20-amp rated – are ideal for use in high-power applications such as charging stations, OBC, power supplies, and motor drives. Their surge capability for a 10 ms pulse is in the range of 7 times the diodes’ nominal current, and confers these 1200 V silicon-carbide diodes the state-of-the-art robustness. With a typical forward voltage drop (V F) of 1.35 V at nominal current and room temperature, they set the highest level/standard on the market. Available in D²PAK and TO-220AC packages, the STPSC10H12-Y, STPSC15H12-Y and STPSC20H12-Y fulfill the automotive robustness and performance requirements.
