RVNB35NV04

已停产
Design Win

OMNIFET II: fully autoprotected power MOSFET

下载数据手册

产品概述

描述

The RVNB35NV04 is a monolithic device designed in STMicroelectronics®VIPower®M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.

Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

  • 所有功能

    • Linear current limitation
    • Thermal shutdown
    • Short circuit protection
    • Integrated clamp
    • Low current drawn from input pin
    • Diagnostic feedback through input pin
    • ESD protection
    • Direct access to the gate of the Power MOSFET (analog driving)
    • Compatible with standard Power MOSFET
    • Aerospace and Defense features
      • Dedicated traceability and part marking
      • Production parts approval documents available
      • Adapted Extended life time and obsolescence management
      • Extended Product Change Notification process
      • Designed and manufactured to meet sub ppm quality goals
      • Advanced mold and frame designs for Superior resilience to harsh environment (acceleration, EMI, thermal, humidity)
      • Single Fabrication, Assembly and Test site
      • Dual internal production source capability

EDA符号、封装和3D模型

意法半导体 - RVNB35NV04

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型