产品概述
描述
The RHFAHC00 device is a very high speed pure CMOS quad 2-input NAND gate, designed for radiation hardness and characterized in total ionization dose (TID) and single event effect (SEE).
It is available in die-form and in hermetic ceramic Flat 14-lead screened as per MIL-PRF-38535 to comply with the needs of space applications. It can work from -55 °C to +125 °C ambient temperature.
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所有功能
- 1.8 V to 3.3 V nominal supply
- 3.6 V max. operating
- 4.8 V AMR
- Very high speed: propagation delay of 3 ns maximum guaranteed
- Pure CMOS process
- CMOS output
- Ultra low power
- 300 krad TID targeted
- 125 MeV.cm2/mg SEL free
- 62.5 MeV.cm2/mg SET free
特别推荐
EDA符号、封装和3D模型
意法半导体 - RHFAHC00
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
|---|
IBIS models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 15 Jun 2021 | 15 Jun 2021 |
质量与可靠性
| 产品型号 | Marketing Status | 包 | 等级规格 | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | 材料声明** |
|---|---|---|---|---|---|---|---|
| RH-AHC00K1 | 批量生产 | Flat-14 | 工业 | Not compliant | - | - | |
| RHFAHC00K01V | 批量生产 | Flat-14 | 工业 | Not compliant | - | - | |
RH-AHC00K1
Package:
Flat-14Material Declaration**:
RHFAHC00K01V
Package:
Flat-14Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | Package: Product Marking | SMD PIN/Detailed Spec | Quality Level | Lead Finish | |
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| RH-AHC00K1 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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| RHFAHC00K01V | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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RH-AHC00K1 批量生产
RHFAHC00K01V 批量生产