产品概述
描述
The 6 A, 150 V ultratfast rectifier LEO1N5811 is a rad-hard rectifier housed in the tiny surface-mount SOD128Flat package, operating with a junction temperature from -40 °C to +175 °C.
The LEO1N5811 meets the challenges of the LEO satellites for performance and reliability in a strict budget thanks to the STMicroelectronics LEO generic specification dedicated to space ready rad-hard plastic power discretes; this AEC-Q101-based specification offers a trade-off among foot-print size savings and cost of ownership together with radiation hardness and large production capacity.
The LEO1N5811 rectifier is suitable for switching mode power supplies and high frequency DC-to-DC converters such as low voltage high frequency inverter, OR-ring, free-wheeling, blocking diode or reverse polarity protection. It is well suited for critical mission equipment such as avionics and Hi-Rel industrial.
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所有功能
- Max. reverse voltage = 150 V
- Average on state current = 6 A
- Max. junction temperature = 175 °C
- DC thermal resistance RTH(JL) = 10 °C/W
- ESCC qualified diode die
- SOD128Flat surface mount package
- Reliability qualification based on AEC-Q101
- Tiny package : 2.5 x 4.8 = 12 mm²
- Low leakage current: 2 µA at VRWM at 25°C
- Fast switching and low on-state voltage
- Radiation tested performances:
- TID 300 krad(Si) at high dose rate
- TNID 3.1011 particles/cm²
- SEB free at full VRWM up to 60 MeV.cm²/mg
EDA符号、封装和3D模型
意法半导体 - LEO1N5811
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 12 Feb 2025 | 12 Feb 2025 |
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (max) | Operating Temperature (°C) (min) | Package: Product Marking | SMD PIN/Detailed Spec | Quality Level | Lead Finish | |
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| LEO1N5811AF | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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LEO1N5811AF 批量生产