产品概述
描述
The JANS2ST3360K power bipolar transistor is a fast, dual complementary matched device (NPN and PNP) housed in a single Flat-8 hermetic package, intended for aerospace Hi-Rel and Rad-hard applications. ST’s high current density technology ensures high levels of electrical and switching performance. Due to its radiation hardness specific design, the post radiation performance makes it the best in its class. The high switching performance allows this device to be particularly suitable for power MOSFET driver applications. It is qualified in the JANS system as per MIL-PRF19500. In case of mismatches between this datasheet and the specification of the agency, the latter takes precedence.
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所有功能
- Very low collector-emitter saturation voltage
- High current gain characteristic
- Fast-switching speed: FT= 130 MHz
- Hermetic package
- JANS qualified
EDA符号、封装和3D模型
STMicroelectronics - JANS2ST3360K
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 20 Apr 2021 | 20 Apr 2021 |
