产品概述
描述
The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz.
The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe storage conditions.
This device contains Beryllium oxide (BeO), which is hazardous if inhaled or ingested.
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所有功能
- Improved ruggedness V(BR)DSS > 200 V
- Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz
- POUT = 450 W typ. with 24 dB gain at 123 MHz
- In compliance with the 2002/95/EC European directive
- Moisture resistant package specifically designed to operate in extreme environments
- Drying recommendation before soldering:
- 48 hrs at 125 °C
- Back finishing:
- Sn96.5/Ag3/Cu0.5 solder
- Base flatness < 0.2 mm
- Gold content < 0.1%
- Minimum solder thickness > 2 μm
EDA符号、封装和3D模型
意法半导体 - STAC4932F1MR
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
质量与可靠性
| 产品型号 | Marketing Status | 包 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STAC4932F1MR | 批量生产 | STAC780-4F | 工业 | Ecopack1 | |
STAC4932F1MR
Package:
STAC780-4FMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STAC4932F1MR | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STAC4932F1MR 批量生产