RF5L08600CB4

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650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

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产品概述

描述

The RF5L08600CB4 is a 650 W, 50 V high performance, internally matched LDMOS FETs, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

  • 所有功能

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched pair transistors in push-pull configuration
    • Large positive and negative gate-source voltage range for improved class C operation
    • In compliance with the european directive 2002/95/EC

EDA符号、封装和3D模型

意法半导体 - RF5L08600CB4

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