RF3L05250CB4

已停产
Design Win

250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

下载数据手册

产品概述

描述

The RF3L05250CB4 is a 250 W 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB/B and C for all typical modulation formats.

  • 所有功能

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate/source voltage range for improved class C operation
    • In compliance with the European Directive 2002/95/EC

EDA符号、封装和3D模型

意法半导体 - RF3L05250CB4

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型