RF3L05250CB4

NRND
Design Win

250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

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产品概述

描述

The RF3L05250CB4 is a 250 W 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB/B and C for all typical modulation formats.

  • 所有功能

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate/source voltage range for improved class C operation
    • In compliance with the European Directive 2002/95/EC

EDA符号、封装和3D模型

意法半导体 - RF3L05250CB4

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质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
RF3L05250CB4
NRND
LBB 工业 N/A

RF3L05250CB4

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LBB

Material Declaration**:

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Marketing Status

NRND

Package

LBB

Grade

Industrial

RoHS Compliance Grade

N/A

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样片和购买

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RF3L05250CB4
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RF3L05250CB4 NRND

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产品型号:

RF3L05250CB4

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商