RF3L05200CB4
Obsolete
Design Win
200 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

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Product overview

描述

The RF3L05200CB4 is a 200 W 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB/B and C for all typical modulation formats.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate/source voltage range for improved class C operation
    • In compliance with the European Directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

STMicroelectronics - RF3L05200CB4

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