产品概述
描述
The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FETs, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats.
-
所有功能
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched for ease of use
- Large positive and negative gate-source voltage range for improved class C operation
- Excellent thermal stability, low HCI drift
- In compliance with the european directive 2002/95/EC
EDA符号、封装和3D模型
意法半导体 - RF2L42008CG2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
|---|
ADS models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 23 Nov 2023 | 23 Nov 2023 |