RF2L15200CB4

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200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor

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产品概述

描述

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class AB, B or C for all typical modulation formats.

  • 所有功能

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the european directive 2002/95/EC

EDA符号、封装和3D模型

STMicroelectronics - RF2L15200CB4

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