产品概述
描述
The LET9070FB is a common source N-channel enhancement mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9070FB is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.
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所有功能
- Excellent thermal stability
- Common source configuration
- POUT (@ 28 V)= 70 W with 16 dB gain @ 945 MHz
- BeO free package
- In compliance with the 2002/95/EC European directive
- Bidirectional ESD
EDA符号、封装和3D模型
意法半导体 - LET9070FB
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