产品概述
描述
The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
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所有功能
- Excellent thermal stability
- Common source configuration
- POUT= 60 W with 17.2 dB gain @ 960 MHz / 28 V
- New RF plastic package
EDA符号、封装和3D模型
意法半导体 - LET9060
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