LET20045C

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Design Win

45W 28V 2GHz LDMOS TRANSISTOR

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产品概述

描述

The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity.

  • 所有功能

    • Excellent thermal stability
    • Common source configuration
    • POUT (@ 28 V)= 54 W with 13.3 dB gain @ 2000 MHz
    • POUT (@ 36 V)= 65 W with 12.5 dB gain @ 2000 MHz
    • BeO free package
    • In compliance with the 2002/95/EC European directive

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意法半导体 - LET20045C

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