产品概述
描述
The LET20030C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity.
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所有功能
- Excellent thermal stability
- Common source configuration
- POUT (@28 V) = 45 W with 13.9 dB gain @ 2000 MHz
- POUT (@36 V) = 53 W with 13.3 dB gain @ 2000 MHz
- BeO free package
- In compliance with the 2002/95/EC European directive
EDA符号、封装和3D模型
意法半导体 - LET20030C
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