产品概述
描述
The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages.
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所有功能
- Complies with the following standards:
IEC 61000-4-2 level 4 ±15 kV (air discharge) ±8 kV (contact discharge) MIL STD 883G - Method 3015-7: class 3B HBM (human body model): ≥8kV - Breakdown voltage VBR = 8.2 V
- High peak power dissipation: 500 W (8/20 μs waveform)
- Unidirectional device
- Low leakage current (< 0.5 μA @ 5 V) Benefits
High EOS and ESD protection level High integration Suitable for high density boards - ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge
- Complies with the following standards:
EDA符号、封装和3D模型
意法半导体 - ESDA8V2-1J
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 | Actions | 細節 | 下載 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 06 Jun 2025 | 06 Jun 2025 |
CAD Symbol & Footprint models (2)
| 资源标题 | 版本 | 更新时间 | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 27 May 2020 | 27 May 2020 | |||
| ZIP | 1.0 | 16 Mar 2020 | 16 Mar 2020 |