产品概述
描述
This Power MOSFET is produced using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. The device offers extremely fast switching performance thanks to the intrinsic fast body diode, making the device ideal for hard switching topologies.
-
所有功能
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
EDA符号、封装和3D模型
意法半导体 - STY130NF20D
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型