产品概述
描述
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
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所有功能
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
所有资源
| 资源标题 | 版本 | 更新时间 |
|---|
产品规格 (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| 4.0 | 03 Mar 2014 | 03 Mar 2014 |
应用手册 (4)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| 1.0 | 05 Sep 2011 | 05 Sep 2011 | ||
| 1.0 | 26 Nov 2012 | 26 Nov 2012 | ||
| 1.0 | 29 Nov 2013 | 29 Nov 2013 | ||
| 1.0 | 06 Jun 2014 | 06 Jun 2014 |
技术文档 (2)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| 2.0 | 22 May 2019 | 22 May 2019 | ||
| 2.0 | 23 Nov 2023 | 23 Nov 2023 |
用户手册 (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| 1.0 | 26 Nov 2013 | 26 Nov 2013 |
宣传册 (5 of 6)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| 1.0 | 13 Apr 2023 | 13 Apr 2023 | ||
| 1.0 | 15 Sep 2021 | 15 Sep 2021 | ||
| 1.0 | 13 Aug 2025 | 13 Aug 2025 | ||
| 1.0 | 27 Feb 2022 | 27 Feb 2022 | ||
| 1.0 | 08 May 2020 | 08 May 2020 | ||
| 1.0 | 07 Dec 2022 | 07 Dec 2022 |
EDA符号、封装和3D模型
意法半导体 - STU80N4F6
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符号
封装
3D模型