产品概述
描述
This product utilizes the 6th generation of design rules of STs proprietary STripFET technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
-
所有功能
- RDS(on) * Qg industry benchmark
- High avalanche ruggedness
- Extremely low on-resistance RDS(on)
- Low gate drive power losses Application
EDA符号、封装和3D模型
意法半导体 - STU150N3LLH6
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型