产品概要
描述
These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
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性能一览
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STU10P6F6
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