产品概述
描述
This P-channel Power MOSFET utilizes the STripFET™ H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.
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所有功能
- Very low on-resistance
- Very low capacitance and gate charge
- High avalanche ruggedness
EDA符号、封装和3D模型
意法半导体 - STT7P2UH7
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符号
封装
3D模型