产品概述
描述
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
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所有功能
- Integrated antiparallel collector-emitter diode
- Minimum lot-to-lot spread for reliable operation
- High voltage capability
- Very high switching speed
EDA符号、封装和3D模型
意法半导体 - STT13005D
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