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STS9P2UH7

已停产
Design Win

P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET H7 Power MOSFET in a SO-8 package

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产品概述

描述

This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.

EDA符号、封装和3D模型

意法半导体 - STS9P2UH7

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