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STS9P2UH7
Obsolete
Design Win
P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET H7 Power MOSFET in a SO-8 package

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This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STS9P2UH7

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