产品概述
描述
This device is a complementary pair transistor. The P-channel Power MOSFET is developed using STripFET™VI DeepGATE™ and the N-channel using the STripFET™ V technology. The resulting device exhibits low on-state resistance and an FOM among the lowest in its voltage class.
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所有功能
- STripFET™V N-channel Power MOSFET
- STripFET™VI DeepGATE™ P-channel Power MOSFET
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
EDA符号、封装和3D模型
意法半导体 - STS8C6H3LL
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