产品概要
描述
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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性能一览
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
特别推荐
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STMicroelectronics - STS6P3LLH6
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
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SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |