产品概述
描述
This product is an N-channel Power MOSFET that utilizes the 5th generation of design rules for ST’s proprietary STripFET™ technology. The lowest available RDS(on)* Qg, in SO-8 package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.
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所有功能
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
EDA符号、封装和3D模型
意法半导体 - STS13N3LLH5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型