产品概述
描述
This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications.
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所有功能
- 100% avalanche tested
EDA符号、封装和3D模型
意法半导体 - STN1N20
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符号
封装
3D模型