产品概述
描述
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
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所有功能
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
EDA符号、封装和3D模型
意法半导体 - STL80N75F6
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