产品概述
描述
This device is a dual N-channel Power MOSFET which utilizes the latest generation of design rules for ST's proprietary STripFET™ V and STripFET™ VI DeepGATE™ technology. The lowest available RDS(on)* Qg in this chip scale package renders the device suitable for the most demanding DC-DC converter applications, where high power density is required.
-
所有功能
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
EDA符号、封装和3D模型
意法半导体 - STL60N32N3LL
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型